Storage cell using low-power / low-threshold CMOS pass transistor with reduced leakage charge

摘要

The present invention relates to a storage cell operating at a low supply voltage, comprising a first bit line, a storage circuit and a pass transistor, the storage circuit having a first storage node for storing a logical state indication of a logical value, Is coupled to each of them to form a conductive path between the first bit line and the first storage node and the first transistor has a bias voltage to convert the first transistor into a non-conductive state when the storage cell is not connected And the transistor to which the reverse bias is applied is characterized in that the leakage current through the pass transistor is reduced.