Laser diode with tensile strained multi-etch stop layer

摘要

The present invention relates to a laser diode (LD) of 630 nm band using a high-quality AlGaInP compound semiconductor, and includes a substrate; An n-clad layer formed on the substrate; An active layer formed on the n-cladding layer; A p-cladding layer formed on the active layer; An etch stop layer formed on the p-cladding layer; A p-cladding layer formed on the etch stop layer so that the middle portion has a ridge pattern; The p-Ga layer formed in the ridge region on the p-_0.5In_0.5P layer and the p-Ga_0.5In_0.5Stop layer is a tensile strained multi-etch stop layer (for example, a p-Ga (lanthanide) layer)_0.65In_0.35P / p-(Al_xGa_1-x)_0.5In_0.5And a superlattice formed so as to have 5 to 10 periods in one period of P). As a result, 1) the energy level of the hole inside the etch stop layer was changed to (Al_{x '}Ga_{1-x '})_0.5In_0.5P barrier layer, it is possible to reduce the trapping of the holes into the etch stop layer. In addition, it is possible to overcome the difficulty of correct etch stop due to the introduction of the multi-layer etch stop layer, and 2) It is possible to realize a highly reliable visible light laser diode capable of reducing the amount of visible light.