The present invention for controlling crystal orientation dependent properties such as residual stress, barrier layer effectiveness and resistivity of a reactively sputtered film, such as titanium nitride, can be used to optimize the design parameters of a deposition apparatus and utilize the apparatus to produce a coated wafer . /RTI The sputtered target is held away from the wafer and a rotating magnetic field is generated by the magnet rotating behind the target. An auxiliary magnet is provided on the wafer to disprove the target magnetic field and allow the ion flux from the plasma to reach the substrate. The film is deposited, and in particular, in the case of titanium nitride deposition, the characteristics of the film resulting from the ratio of the 200 to the 111 crystal orientation and the uniformity of the ratio are measured. The press magnet configuration and target to wafer spacing are changed and the above ratios are measured. The changes and measurements are repeated until ratio and non-uniformity are reached. Next, the device design is set, and the produced wafer has the desired characteristics.
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