Insulated gate bipolar transistor module using MOSFET gate PNP switch

摘要

The module includes an IGBT component of a bipolar PNP transistor (10), and two MOSFETs (11,40). The source region of one MOSFET (11) is coupled to the PNP transistor base region. This MOSFETs drain region and the PNP transistor emitter region are also interconnected and coupled to an emitter electrode (26). The other MOSFET (40), with source and drain regions and a gate electrode, has its source region connected to the collector electrode (38), with its drain region being linked to the source region of the initial MOSFET. Pref. the supply and switching of a gate voltage to the initial MOSFET gate electrode (G1) switches ON or OFF the PNP transistor.