Semiconductor device having a conductor pattern, in which a plurality of lines are arranged closely one beside the.

摘要

PURPOSE:To make residual liquid at a bending part hard to occur and to prevent unnecessary etching of a CVD film by providing a plurility of wirings and the CVD film on an insulating layer, and making the interval between a plurality of wirings after the bending at the bending part wider than the interval before bending. CONSTITUTION:Three wirings 1, 1... which are extending in the lateral direction are arranged at the minimum interval lambda1 of a design rule. The three wirings 1, 1... are bent at a bending part 2 by 90 deg.. The wirings are turned so that the wirings are extending in the longitudinal direction. Then the wirings are arranged at a wider interval lambda2 than the minimum interval lambda1. The wirings 1, 1... are formed on an insulating film 5. A CVD film 3 is deposited on the wirings 1, 1.... The arranging interval lambda2 between the wirings 1, 1... after the bending at the bending part 2 is made wider than the arranging interval lambda1 between the wirings 1, 1... before the bending. Even if liquid and the like used in water cleaning step stagnate at the bending part 2 due to capillarity, the liquid and the like are discharged to the outside through the wide-interval parts of lambda2 as the outlet ports from the bending part 2.