Several times - quantum well - semiconductor laser with the pretensioned the grid and the production method.

摘要

PURPOSE: To provide a distortion multiple quantum well semiconductor laser which enables rapid operation without generating transfer inside an active layer. ;CONSTITUTION: The device is a distortion multiple quantum well semiconductor laser which is formed of an n-type In_0.76Ga_0.24As_0.55P_0.45 waveguide layer 102, a nondoped In_0.7Ga_0.3As/In_0.76Ga_0.24As_0.55P_0.45 distortion multiple quantum well active layer 103 and a p-type InP clad layer 104 on an n-type InP substrate 101. The distortion multiple quantum well active layer 103 consists of a ten-layer 3nm-thick In_0.7Ga_0.3As distortion well layer 114 and an In_0.76Ga_0.24As_0.55P_0.45 barrier layer. A barrier layer which is a fifth layer from the substrate 101 is a 30nm-thick distortion absorbing layer 115, and eight-layer barrier layer excepting it is 10nm-thick. According to this constitution, it is possible to readily acquire a semiconductor laser which is free from transfer into the active layer 103 and deterioration of injection efficiency of a hole and enables rapid operation.;COPYRIGHT: (C)1994,JPO&Japio