首页>
外国专利>
Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
展开▼
机译:具有与隧穿势垒对准的栅电极的横向谐振隧穿器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
展开▼