Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors

摘要

Heterostructures made of 2D materials are the focus of many studies, owing to reduced carrier dimensionality combined with near-perfect interfaces. In a prior study[1], we demonstrated NDR both at low and room temperature with a peak-to-valley ratio (PVR) ≤ 2 in a ReS₂/hBN/ReS₂ Resonant Interlayer tunnel field effect transistor (RITFET) heterostructure. With two new devices, we show, respectively, the effects of changing the tunnel barrier thickness, and of ReS₂ interlayer rotational alignment and added top gating, which provides additional insight in the origin of the observed NDR.