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Method of making single polysilicon self-aligned bipolar transistor having reduced emitter-base junction
Method of making single polysilicon self-aligned bipolar transistor having reduced emitter-base junction
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机译:具有减小的发射极-基极结的单个多晶硅自对准双极晶体管的制造方法
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摘要
A self-aligned single polysilicon bipolar transistor structure and a method of formation thereof are provided. The transistor has an emitter structure characterised by T shape defined by inwardly extending sidewall spacers formed by oxidation of amorphous or polycrystalline silicon, rather than the conventional oxide deposition and anisotropic etch back. Advantageously the method compatible with bipolar CMOS processing and provides a single polysilicon self-aligned bipolar transistor with a reduced number of processing steps. Further the formation of inwardly extending sidewalls defining the emitter width reduces the emitter base junction width significantly from the minimum dimension which is defined by photolithography, while a large area emitter contact is also provided.
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