Desorption mass spectrometric control of alloy composition during molecular beam epitaxy

摘要

System and method for controlling alloy composition during molecular beam epitaxy growth of group III-V ternaries at high substrate temperature or under any conditions which give rise to significant desorption rates is described which incorporates desorption mass spectrometry in a real time feedback loop for continuous monitoring and control of layer composition by control of incident group V (e.g., arsenic) flux.