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Dynamic threshold voltage mosfet having gate to body connection for ultra- low voltage operation
Dynamic threshold voltage mosfet having gate to body connection for ultra- low voltage operation
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机译:动态阈值mosfet具有栅极至主体的连接以实现超低压操作
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摘要
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. Several efficient connections using through hole plating or polycrystalline silicon gate extension are disclosed. A higher power supply voltage can be used by interconnecting the gate and device body through a smaller MOSFET.
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