FIELD-EFFECT TYPE PHOTOELECTRIC ENERGY CONVERTER

摘要

PROBLEM TO BE SOLVED: To increase an electric field in a semiconductor in the vicinity of a ferroelectric, and to inhibit the recombination of an electron-hole pair generated by light by forming a comb-shaped electrode and a ferroelectric layer on a hydrogenated amorphous silicon layer. ;SOLUTION: A lower electrode 32 is formed onto a substrate 31, a p-type hydrogenated amorphous silicon layer 33, an i-type hydrogenated amorphous silicon layer 34 and an n-type hydrogenated amorphous silicon layer 35 are growm successively on the lower electrode 32. The hydrogenated amorphous silicon layers may also have n-i-p structure, and the hydrogenated amorphous silicon layers excepting the uppermost layer 35 may also have only i-p structure and i-n structure. Comb-shaped electrodes 36 are formed onto the n-type hydrogenated amorphous layers 35, and a ferroelectric layer 37 is grown on the electrodes 36. A transparent conductive film 38 as an upper electrode is formed onto a surface. According to such constitition, an electric field is induced to the hydrogenated amorphous silicon layer by the spontaneous polarization effect of the ferroelectric layer. Consequently, the recombination of electrons and holes is inhibited by the increase of the electric field induced by the spontaneous polarization effect of a ferroelectric.;COPYRIGHT: (C)1997,JPO