METHOD FOR REMOVING OVERCOAT FOR ANALYSIS OF ELECTRIC CHARACTERISTIC OF SEMICONDUCTOR DEVICE HAVING REDUNDANCY FUSE

摘要

PURPOSE: To remove an overcoat of a semiconductor device surface layer for an analysis of an electric characteristic without giving a change to a redundancy fuse and losing data of redundancy. ;CONSTITUTION: In a method for removing an overcoat for an analysis of an electric characteristic of a semiconductor device having a redundancy fuse 5, under conditions that a portion of the redundancy fuse 5 of the semiconductor device is coated with a protection film 23 having etching-resistance, and that the redundancy fuse 5 is coated with the protection film 23, an overcoat 19 of a semiconductor device surface layer is removed by etching.;COPYRIGHT: (C)1997,JPO