FAILURE ANALYSIS OF SEMICONDUCTOR WAFER AND DEVICE THEREOF

摘要

PROBLEM TO BE SOLVED: To make it possible to accurately grasp a pattern defect generation process. ;SOLUTION: When a pattern defect 1 is detected in an (n-2)th process, pattern defects in an (n-1)th process are retrieved, all the pattern defects detected in the (n-1)th process at a prescribed region, where the pattern defect 1 is detected, are decided to be ones generated in the (n-2)th process and when pattern defects 2 and 3 are detected outside of the prescribed region, these pattern defects 2 and 3 are decided to be ones developed in the (n-1)th process. Then, pattern defects in an nth process are retrieved, all the pattern defects detected in the nth process at a prescribed region, where the defects 2 and 3 are detected in the (n-1)th process, are decided to be ones generated in the (n-1)th process and when pattern defects 4, 5 and 6 are detected outside of the prescribed region, where the defects 2 and 3 are detected, these defects 4, 5 and 6 are decided to be ones developed in the nth process.;COPYRIGHT: (C)1997,JPO