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Failure analysis apparatus and failure analysis method of semiconductor wafer

机译:半导体晶片的故障分析装置及故障分析方法

摘要

Is stored in the data storage means 10 including defect position coordinates based on physical inspection results such as foreign objects and defects on the surface of the semiconductor wafer in the defect inspection apparatus 3. [;The physical position coordinate data based on the fail bit data in the tester 6 is stored in the memory end 13.;The data indicating the additional defective area based on the fail bit data is created by the additional defective area estimating means 14 and stored in the storage means 15. [;The combining means 16 creates correction physical positional interpolation data containing the limitation condition data for each defective mode stored in the storage means 15 in the physical position coordinate data stored in the storage means 13 and stores the corrected physical position coordinate data and the correction physical position coordinate data Combine defective position coordinate data.;Therefore, even if the degree of combination is increased, there is no defect caused by a defect in a defective address obtained in the fail bit data, and even if there is a defect caused by a defect in relation to being located at the defective address, the defect is analyzed The degree of estimation is improved.
机译:在缺陷检查装置3中被存储在数据存储装置10中,该数据存储装置10包括基于诸如异物和半导体晶片表面上的缺陷之类的物理检查结果的缺陷位置坐标,[;基于故障位数据的物理位置坐标数据在测试器6中的数据被存储在存储器端13中。指示基于故障位数据的附加缺陷区域的数据由附加缺陷区域估计装置14创建并存储在存储装置15中。[组合装置16在存储装置13中存储的物理位置坐标数据中,创建包含针对存储装置15中存储的每种缺陷模式的限制条件数据的校正物理位置插值数据,并存储校正后的物理位置坐标数据和校正物理位置坐标数据位置坐标数据。因此,即使组合度增加,也没有由在故障位数据中获得的缺陷地址中的缺陷引起的缺陷,并且即使由于与缺陷地址有关而存在缺陷,也可以分析缺陷,从而提高了估计度。

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