PLASMA ETCHING METHOD FOR LOW-DIELECTRIC CONSTANT SILICON OXIDE INSULATION FILM

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method whereby a high selection ratio of low-dielectric constant Si oxide insulation films such as SiOF, practical etching rate and low particle level can be attained. ;SOLUTION: Using a mixed gas of fluorocarbon gas contg. H₂O and H₂O₂, contact holes 5 are opened through a low-dielectric constant Si oxide insulation film 3 on a semiconductor substrate 1. The flow rate ratio of the mixed gas may be changed to etch at two steps and deposition of S may be used together. Film of fluorocarbon polymer is reinforced to improve the selectivity to a resist mask 5 or semiconductor substrate 1. Since the amount of the polymer to be deposited can be reduced, the particle level also lowers.;COPYRIGHT: (C)1997,JPO