MEMORY CELL FOR INTEGRATED CIRCUIT, PROGRAMMABLE LOGICAL UNIT WITH MEMORY CELL, SYSTEM WITH MEMORY CELL, MEMORY CELL AND DYNAMIC MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a dynamic, non-volatile and reprogrammable memory cell for storing data on an integrated circuit. SOLUTION: A logical high output form a memory cell 400 is almost VDD and a logical low output is almost VSS. The memory cell 400 includes a first programmable memory element 515. The first programmable memory element 515 is connected between a voltage source 510 and an output node 405. A charge pumping node 545 dynamically charges the output node 405 to almost VDD via a charging transistor 525. When the programmable memory element 515 is not programmed, the memory cell stores and outputs the logical low level. When the programmable memory element 515 is programmed, the memory cell stores and outputs the logical high.