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PHASE SHIFT EXPOSURE MASK AND EXPOSURE METHOD USING PHASE SHIFT EXPOSURE MASK

机译:相移曝光面罩和使用相移曝光面罩的曝光方法

摘要

PROBLEM TO BE SOLVED: To provide a phase shift exposure mask and an exposure method using the phase shift exposure mask by which a practical bottleneck such as decrease in the depth of focus is not caused but its performance can be enough made use of. SOLUTION: A light-shielding film 2 is formed on a transparent substrate 1 such as quartz to form a semi light-shielding part 3 and a light-transmitting part 4. Moreover, this structure is formed in such a manner that the phase of transmitted light through the semi light-shielding part 3 is different from the phase of the light through the light-transmitting part 4. A diffraction pattern 5 to diffract transmitted light is formed on the opposite surface of the substrate to the surface where the light-shielding film 2 is formed. By using the phase shift exposure mask having this structure, exposure light P is made to irradiate through the exposure diffraction pattern 5.
机译:解决的问题:提供一种相移曝光掩模和使用该相移曝光掩模的曝光方法,通过该相移曝光掩模不会引起诸如减小聚焦深度的实际瓶颈,但是可以充分利用其性能。解决方案:在诸如石英之类的透明基板1上形成遮光膜2,以形成半遮光部分3和透光部分4。此外,以这种结构形成透射相位的方式通过半遮光部3的光与通过透光部4的光的相位不同。在基板的与遮光面相反的一侧的面上形成有使透过的光衍射的衍射图案5。形成膜2。通过使用具有这种结构的相移曝光掩模,使曝光光P通过曝光衍射图案5照射。

著录项

  • 公开/公告号JPH0961986A

    专利类型

  • 公开/公告日1997-03-07

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19950211800

  • 发明设计人 SHIMIZU HIDEO;

    申请日1995-08-21

  • 分类号G03F1/08;G03F1/14;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 03:31:31

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