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MAGNETORESISTIVE SENSOR BASED ON OSCILLATIONS IN THE MAGNETORESISTANCE

机译:基于磁阻振荡的磁阻传感器

摘要

ABSTRACTDescribed is a magnetoresistive (MR) sensor comprising a multilayered structureformed on a substrate includes alternating layers of a ferromagnetic material (12) and copper(14). The ferromagnetic material and the copper form bilayers which exhibit the propertythat the magnetoresistance of the multilayered structure oscillates as a function of thicknessof the non-magnetic material. A current flow is produced through the MR sensor, and thevariations in the resistivity of the MR sensor are sensed as a function of the magnetic fieldbeing sensed. Also described is a sensor having a quadlayer structure which comprisesalternating layers bf a first and second ferromagnetic material and a non-magnetic metallicmaterial.Fig. 3
机译:抽象描述了一种包括多层结构的磁阻(MR)传感器形成在基板上的金属层包括铁磁材料(12)和铜的交替层(14)。铁磁材料和铜形成表现出该特性的双层多层结构的磁阻随厚度而变化非磁性材料。电流流过MR传感器,并且感测到MR传感器的电阻率变化是磁场的函数被感动。还描述了具有四层结构的传感器,其包括第一和第二铁磁材料和非磁性金属的交替层材料。图3

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