MAGNETORESISTIVE SENSOR BASED ON OSCILLATIONS IN THE MAGNETORESISTANCE

摘要

A magnetoresistive (MR) sensor comprising amultilayered structure formed on a substrate includesalternating layers of a ferromagnetic material and anon-magnetic metallic material. The ferromagneticmaterial and the non-magnetic material form bilayerswhich exhibit the property that the magnetoresistance ofthe multilayered structure oscillates as a function ofthickness of the non-magnetic material. A current flowis produced through the MR sensor, and the variations inthe resistivity of the MR sensor are sensed as a functionof the magnetic field being sensed.