METHOD AND APPARATUS FOR FORMING AMORPHOUS CARBON THIN FILM BY PLASMA CHEMICAL VAPOR DEPOSITION

摘要

In a method of forming an amorphous carbon thin filmwith a plasma chemical vapor deposition method, at least oneof a hydrocarbon gas and a carbon fluoride gas is supplied ina reaction chamber as a material gas. By applying a highvoltage between two electrodes, a plasma is generated in thereaction chamber using the supplied material gas. As aresult, an amorphous carbon thin film is deposited on asubstrate while preventing deposition of an adhesion on aninner wall of the reaction chamber. In order to prevent theadhesion from depositing on the inner wall, at least a partof the inner wall of the reaction chamber is heated to apredetermined temperature or above such that a adhesioncoefficient of the adhesion is 0. The predeterminedtemperature is 200 °C. The reaction chamber is desirablymade from a material having a thermal conductivity sufficientto unify a temperature of the whole of the reaction chamber.Alternatively, in order to prevent the adhesion fromdepositing on the inner wall, a bias voltage such as one ofDC bias, a high frequency bias and a high frequency baisimposed on a DC bias is applied to the electricallyconductive reaction chamber.