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Power MOSFET safe operating area current limiting device

机译:功率MOSFET安全工作区限流装置

摘要

An embodiment of the present invention is a switching power supply that includes a full-wave bridge rectifier to rectify incoming AC line voltage, a transformer having a primary winding and two secondary windings and a switched mode power supply chip that includes an integrated high voltage power MOSFET with a low voltage tap in the drift region. The MOSFET controls power switching of the primary winding of the transformer and has a high voltage present during initial power-up. This high voltage is dropped across the JFET part of the MOSFET and supplies a safe operating area protection circuit with a low voltage signal that will shut-off the MOSFET if the current passing through the MOSFET produces a voltage drop at the tap that exceeds a predetermined maximum.
机译:本发明的一个实施例是一种开关电源,包括:全波桥式整流器,以整流输入的交流线电压;变压器,具有初级绕组和两个次级绕组;以及开关模式电源芯片,其包括集成的高压电源。在漂移区具有低压抽头的MOSFET。 MOSFET控制变压器初级绕组的功率开关,并且在初始加电期间具有高电压。该高电压在MOSFET的JFET部分上下降,并为安全工作区保护电路提供低压信号,如果流经MOSFET的电流在抽头上产生的电压降超过预定值,则该信号将关闭MOSFET。最大。

著录项

  • 公开/公告号EP0585847B1

    专利类型

  • 公开/公告日1997-05-14

    原文格式PDF

  • 申请/专利权人 POWER INTEGRATIONS INC;

    申请/专利号EP19930113799

  • 发明设计人 BALAKRISHNAN BALU;

    申请日1993-08-28

  • 分类号H02M3/335;H01L27/02;H02H7/122;

  • 国家 EP

  • 入库时间 2022-08-22 03:20:43

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