A complementary differential amplifier having a high degree of freedom in designing a DC amplification gain and a semiconductor memory device using the complementary differential amplifier

摘要

The present invention relates to a complementary differential amplifier which is used in a semiconductor integrated circuit, particularly a semiconductor memory circuit, and amplifies a minute complementary signal at a high speed with a complementary output of large amplitude. In order to increase the design freedom of the DC amplification gain and reduce the transmission rate delay, A plurality of cascade-connected internal differential amplifying means for sequentially inputting a complementary input as a first complementary input and sequentially amplifying the input complementary input, Each of the internal differential amplification means comprises a pair of first and second internal output nodes, the complementary internal output being generated, the source of which is coupled to the first power supply potential and the gate thereof is crossed to its drain, A pair of first and second MOS transistors of first conductivity type respectively connected to internal output nodes, a pair of MOS transistors of first conductivity type Third and fourth MOS transistors of a first conductivity type diode connection connected between a first power supply and a pair of internal output nodes in parallel with each other and a pair of internal output nodes and a second power supply, And a driving circuit for driving the first to fourth MOS transistors according to the complementary internal output of the previous stage in the next stage in accordance with the complementary input.;With such a configuration, it is possible to increase the degree of freedom in designing the DC amplification factor, and to shorten the delay time of the driving circuit and the logic circuit in the next stage.