How to shorten TTA (Turn Around Time) in manufacturing custom semiconductors

摘要

The present invention relates to a method for shortening the TAT (Turn Around Time) in manufacturing a semiconductor, and to provide a method for shortening the TAT (Turn Around Time) which can cope with a short delivery time requirement of a user and is suitable for cost reduction of a user. .;The TAT (Turn Around Time) shortening method of the present invention for separating the field region and the active region on the semiconductor substrate to grow a field oxide film in the field region, forming a gate electrode and a cap insulating film on the active region Implanting low concentration n ⁻ impurity ions for source / drain formation using the gate electrode as a mask, forming a gate sidewall in the resultant, and implanting high concentration n ⁺ impurity ions to form a source / drain region in the semiconductor substrate on both sides of the gate electrode Forming a planarization insulating film on the resultant and selectively removing the planarization insulating film to form contact holes of all combinations in a cell part to be used and a cell part not to be used, the cell part to be used Forming a metal pattern for electrical connection to the cell site, The portion where the contact hole is formed is characterized by forming a dummy metal pattern that is not electrically connected to cover the contact hole forming portion.