Method of manufacturing high performance PNP vertical bipolar transistor using polycrystalline silicon thin film transistor process

摘要

The present invention relates to a method for manufacturing a high performance PNP vertical bipolar transistor using a polysilicon thin film transistor process, and a method of manufacturing a PNP bipolar transistor implemented on the same substrate as a PMOS polysilicon thin film transistor includes a source / drain of the PMOS polysilicon thin film transistor. When forming a contact window for connecting the forming P-type polysilicon and the conductive layer thereunder, the emitter forming contact window of the PNP bipolar transistor is formed simultaneously. Therefore, the method for manufacturing a bipolar transistor according to the present invention uses polysilicon for source / drain formation of a thin film transistor to include P + polysilicon for emitter formation of a PNP transistor, thereby eliminating the need for an additional process. Has the effect of implementing a transistor.