Method for forming concave photoresist lift-of-profile for thin film device processing and thin film device fabricated thereby

摘要

For example, a self-aligned (" MR ") readhead as well as a self-aligned sputtered film, such as a permanent magnet (PM) film, for use in a device manufactured thereby. A barrier that forms a re-entrant photoresist lift-off profile. The photoresist is patterned in a conventional manner on a thin film layer on a suitable substrate and then the photoresist is exposed to a suitable developer resulting in a photoresist region having substantially vertical sidewalls. Thus, an electron beam, or other suitable energy source, is used to cross-link (or be relatively inexpensive) the upper portion of the positive tone resist image by accelerating a sufficient number of electrons to a well-controlled depth into the photoresist. The second electron beam is then distributed over the entire photoresist so that the lower portion of the photoresist is relatively soluble in the developer. The resist is then developed for a predetermined time to realize an undercut in the lower portion of the photoresist.