METHOD AND APPARATUS FOR GROWING THIN FILM (HETHOD AND APPARATUS FOR GROWING THIN FILMS)

摘要

The present invention relates to a method for growing a thin film on a substrate on which a selectively repeated surface reaction of at least two reactants is carried out for the purpose of thin film growth on a substrate placed in a reaction space (21). According to the present method, each reactant separated from the reaction specimen is supplied repeatedly and selectively into the reaction (21) in a vapor phase form, and the steam is supplied to the reaction (21) so as to be reacted with the surface of the substrate The phase reactant is contacted. According to the invention, the gas volume of the reaction space is introduced by means of a vacuum pump of two successive vapor phase reactant pulses. By transporting different starting materials at different times through the apparatus, the starting materials can be separated from each other and thus prevent premature interaction.