METHOD FOR PRODUCING POROUS SILICON BASE LUMINESCENT FILMS

摘要

FIELD: electroluminescence devices with porous silicon as active layer. SUBSTANCE: method involves anodic oxidation of silicon plates covered with porous silicon layer formed in 0.1-0.5M aqueous solution of ammonium dihydrophosphate at current density of 1-10 mA/sq.cm. Radiation spectrum is shifted for short time between 750 and 590 nm and luminous intensity rises from 2,5 x 10³ to 5 x 10⁵ relative units. Anodizing process in electrostatic mode is characterized in utmost terminal voltage of 250 V. EFFECT: improved luminous intensity, high depth of anodic oxidation.