A method for the production of eeprom - memory cells with a single polysilicon layer and a thin oxide by means of different oxidation

摘要

Method,It is used to manufacture EEPROM storage units,It, which has, selects transistor(20)Polysilicon and thin oxide film a single level,Sensing has a floating gate(5)Transistor(22),Control door(10),It is with capacitive coupling,It is with thin oxide film(9)Floating gate(5)With a tunnel area(23),Including being related to effective coverage(The first step of 41 definition(29),42)Without field oxidation(11),In control door(10)And floating gate(5)Between in a coupled zone(24)It is related to the implantation of ion(10 minutes)A second step(30),One third step(31),It is related in effective coverage(41 gate oxide(21)Creation,42),It is related to the implantation of additional ion(10 seconds one the 4th steps(32),8)In the attachment areas(24)In control door(10)And floating gate(5)Between and in the tunnel area(23),One the 5th step(33),It is related in the region(Gate oxide on 24(21)At the removal of stratum,23),It is related to coupled oxide(12)Difference increase and tunnel oxide(9)The 6th step(34),It is in the attachment areas(24)And tunnel area(23)With one the 7th step(35),It is related to the polysilicon for forming floating gate(5)The deposition of layer.