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quantumwell - halbleiterlaser with material made up of layers of quantum potentialtopfschicht
quantumwell - halbleiterlaser with material made up of layers of quantum potentialtopfschicht
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机译:量子阱-具有由量子势层组成的材料的半导体激光器
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摘要
The present invention provides a quantum-well semiconductor laser device having a substrate, a clad layer on the substrate, an optical confinement layer on the clad layer, an active layer on the optical confinement layer, an optical confinement layer on the active layer and a clad layer on the optical confinement layer each of which formed of a semiconductor wherein the active layer formed of a multi-layer quantum-well structure of which each layer comprising a quantum-well layer, a first barrier layer adjacent the quantum-well layer and a second barrier layer adjacent the first barrier layer wherein the semiconductor of the first barrier has a higher energy level at a GAMMA point of a valence band than that of the second barrier layer. IMAGE
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