首页>外文会议>Indium Phosphide and Related Materials, 1990. Second International Conference.

Indium Phosphide and Related Materials, 1990. Second International Conference.

召开年：
召开地：Denver, CO
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.A novel high-speed broad wavelength InAlAs/InGaAs Schottky barrierphotodiode for 0.4 to 1.6 μm detection

机译：新型高速宽波长InAlAs / InGaAs肖特基势垒光电二极管，用于0.4至1.6μm检测
- 作者：Hwang K.C.;Li S.S.;Kao Y.C.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
2.Electrical characterization of Pt-Ti/p-InGaAs-InPheterostructures

机译：Pt-Ti / p-InGaAs / n-InP的电学表征异质结构
- 作者：Jiao K.L.;Soltyka A.J.;Anderson W.A.;Katz A.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
3.Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers

机译：从 I确定二极管参数和阈值电流InGaAsP / InP DFB DH激光器的- V 测量
- 作者：Kanack B.;Alavi K.;Appelbaum A.;Jiang C.L.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
4.Detection of compositional non-uniformities in InP:Fe via spatiallyresolved photoluminescence and secondary ion mass spectrometry

机译：通过空间检测InP：Fe中的成分不均匀性分辨光致发光和二次离子质谱
- 作者：Carver G.E.;Moore R.D.;Trapp K.D.C.;Kahora P.M.;Stevie F.A.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
5.Highest current gain cutoff frequency with 0.08 μm gate HEMT onInP

机译：栅极HEMT处于0.08μm时的最高电流增益截止频率铟磷
- 作者：Riaziat M.;Nishimoto C.;Silverman S.;Pao Y.C.;Weng S.L.;Glenn M.;Bandy S.;Majidi-Ahy R.;Zdasiuk G.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
6.Surface passivation of In_0.53Ga_0.47As usingthin Si layers by novel in-situ interface control processes

机译：In _{0.53 Ga _{0.47 As的表面钝化通过新颖的原位界面控制工艺形成薄硅层}}
- 作者：Akazawa M.;Ohue E.;Ishii H.;Iwadate H.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
7.Electronic properties of InAs surface quantum wells grown onInP(100)

机译：InAs表面量子阱的电子性质InP（100）
- 作者：Viktorovitch P.;Gallet D.;Gendry M.;Hollinger G.;Schohe K.;Benyattou T.;Tabata A.;Regaud D.;Guillot G.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
8.Expertise, optimisation and control of InP and related technologiesby scanning photoluminescence measurements

机译：InP和相关技术的专业知识，优化和控制通过扫描光致发光测量
- 作者：Krawczyk S.K.;Schohe K.;Garrigues M.;Tardy J.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
9.Tertiarybutylarsine as a substitute for AsH₃:application to InGaAs/InP photonic integrated circuits

机译：叔丁基ar氨酸替代AsH _{3 ：在InGaAs / InP光子集成电路中的应用}
- 作者：Miller B.I.;Young M.G.;Koren U.;Koch T.L.;Oron M.;Gnall R.P.;Zucker J.E.;Jones K.E.;Hernandez-Gil F.;DeMiguel J.L.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
10.Control of a reactive ion etching process for InP and relatedmaterials by in-situ ellipsometry in the near infrared

机译：InP及其相关反应性离子蚀刻工艺的控制近红外原位椭圆光度法测定材料
- 作者：Muller R.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
11.InP substrate etched with methane reactive ion etching technique:surface characterization and epitaxial growth

机译：甲烷反应离子刻蚀技术刻蚀的InP衬底：表面表征和外延生长
- 作者：Henry L.;Le Corre A.;Lecrosnier D.;Gauneau M.;Vaudry C.;Alnot P.;Olivier J.;Krawczyk S.K.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
12.AnIn_0.52Al_0.48As+-In_xGa_1-xAs heterostructure field-effect transistor with anIn-enriched channel

机译：一个In _{0.52 Al _{0.48 As / n + -In _{x Ga_{1-x 作为异质结场效应晶体管，具有丰富渠道}}}}
- 作者：Bahl S.R.;del Alamo J.A.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
13.Submicron double heterojunction strained InAlAs/InGaAs HEMTs: anexperimental study of DC and microwave properties

机译：亚微米双异质结应变InAlAs / InGaAs HEMT：直流和微波特性的实验研究
- 作者：Ng G.I.;Lai R.;Pavlidis D.;Pamulapati J.;Bhattacharya P.K.;Studer-Rabeler K.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
14.Controlled growth of GaInAs/InP MQW and GaInAsP/GaInAs separateconfinement MQW laser structures by LP-MOVPE

机译：GaInAs / InP MQW和GaInAsP / GaInAs的受控增长分开LP-MOVPE限制MQW激光结构
- 作者：Grutzmacher D.;Hergeth J.;Glade M.;Wolter K.;Reinhardt F.;Fidorra F.;Wolfram P.;Balk P.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
15.High performance long wavelength strained layer InGaAs/InP quantumwell lasers

机译：高性能长波长应变层InGaAs / InP量子激光井
- 作者：Tanbun-Ek T.;Logan R.A.;Olsson N.A.;Temkin H.;Sergent A.M.;Wecht K.W.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
16.OMVPE of InP-based structures for photonic devices

机译：基于InP的光子器件结构的OMVPE
- 作者：Carey K.W.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
17.Second International Conference. Indium Phosphide and RelatedMaterials (Cat. No.90CH2859-7)

机译：第二届国际会议。磷化铟及相关材料（货号90CH2859-7）
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
18.High transconductance InGaAs FETs using an undoped amorphoussilicon Schottky barrier enhancement layer

机译：使用非掺杂非晶态的高跨导InGaAs FET硅肖特基势垒增强层
- 作者：Bland S.W.;Galashan A.F.;Kitching S.A.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
19.VPE growth of high purity and high uniformity InGaAs/InP epitaxiallayers on 2-inch diameter InP substrate

机译：外延生长高纯度高均匀度InGaAs / InP的VPE生长2英寸直径InP基板上的涂层
- 作者：Miura Y.;Takemoto K.;Iwasaki T.;Yamabayashi N.;Kaji M.;Murai S.;Tada K.;Akai S.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
20.Low temperature DC characteristics of pseudomorphic Ga_0.18In_0.82P/InP/Ga_0.47In_0.53As HEMT

机译：伪Ga _{0.18的低温直流特性 In _{0.82 P / InP / Ga _{0.47 In _{0.53 为HEMT}}}}
- 作者：Loualiche S.;Ginudi A.;Le Corre A.;Lecrosnier D.;Vaudry C.;Henry L.;Guillemot C.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
21.Hybrid electronics based on InP and high temperaturesuperconductors

机译：基于InP和高温的混合电子产品超导体
- 作者：Singh R.;Semnani M.J.;Cruz J.R.;Sinha S.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
22.Comparison between InP and other semiconductor, materials for therealization of millimeter wave two terminal devices

机译：InP与其他半导体材料的比较毫米波两个终端设备的实现
- 作者：Rolland P.A.;Friscourt M.R.;Dalle C.;Lippens D.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
23.Improvement of large area homogeneity of InP based III-V layers byusing the gas foil rotation concept

机译：通过以下方法提高基于InP的III-V层的大面积均匀性使用气箔旋转概念
- 作者：Strauch G.;Schmitz D.;Jurgensen H.;Heyen M.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》
24.p-type doped channel FETs using strained and lattice matchedInAlAs/InGaAs heterostructures

机译：使用应变和晶格匹配的p型掺杂沟道FETInAlAs / InGaAs异质结构
- 作者：Chan Y.J.;Pavlidis D.
- 会议名称：《Indium Phosphide and Related Materials, 1990. Second International Conference.》