quantumwell - halbleiterlaser device with clenched grid

摘要

There is provided a strained quantum well layer type semiconductor laser device that shows an improved temperature dependency of the threshold current and a high frequency performance while maintaining an excellent low threshold current operability. A strained quantum well layer type semiconductor laser device according to the invention comprises a light emitting active layer 14 of a multilayer structure including a quantum well layer 14a and a barrier layer 14c and a pair of light confining layers 13, 15, respectively laid on and under the active layer, the quantum well layer being made of InAsyP1-y (0y/=1), the barrier layer and/or the light confining layers being made of In1-xGaxP (0x/=1). Such a device shows an improved temperature dependency of the threshold currentand a high frequency performance, while maintaining an excellent low threshold current operability because of the structural features of its active layer. IMAGE