Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate

摘要

A production method for ion-implanted MESFET having self- aligned LDD structure and T-type gate, that the reverse mesa portion is formed at a predetermined part of the channel region which the source and drain regions are formed at both side by using caps layer, the ion is injected between the source and drain regions and the channel region as the small energy and low concentration by using the reverse mesa as the mask, the source and drain regions of the low concentration is formed so that drain part has more broadly than source part, and the gate electrode and the source and drain regions of the low concentration are not contacted at the formed groove which is removed the surface of the reverse mesa portion or the reverse mesa portion.