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Methods of synthesizing and polishing a flat diamond film and free- standing diamond film

机译:合成和抛光平整金刚石膜和独立式金刚石膜的方法

摘要

A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential- convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880 C. to 950 C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800. degree. C. to 850 C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis. A multilayered diamond film with an arbitrary curvature can be produced by selecting the production conditions (a) and (b), and the thicknesses of the potential-convex layers and the potential-concave layers.P PThe diamond films still fixed on the substrate can be polished by an ordinary polishing apparatus, since the film is flat. A polished flat diamond film can be obtained by eliminating the substrate.
机译:通过在非金刚石基体上交替生长至少一对势凹型金刚石层和势凸型金刚石层并去除该基体,来生产平坦的自支撑金刚石膜。势凹膜是在条件(b)下通过CVD法制造的,其特征在于基板温度为880℃至950℃,并且烃比率为2.5体积%至3.5体积%。在条件(a)下通过CVD法制造电位凸膜,其特征在于基板温度为800度。 ℃至850℃,烃比例为0.5体积%至1.5体积%。尽管沉积速度较慢,但​​条件(a)仍可制得具有良好晶体质量的电位凸膜。为了减少合成的总时间,优选采用较薄的电势凸膜和较厚的电势凹膜的组件。通过选择生产条件(a)和(b)以及势凸层和势凹层的厚度,可以生产具有任意曲率的多层金刚石膜。

由于膜是平坦的,因此可以通过普通的抛光设备对固定在基板上的固定膜进行抛光。可以通过去除基材来获得抛光的金刚石平膜。

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