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Method for synthesizing flat diamond film, diamond free-standing film, and polishing method for diamond film

机译:平面金刚石膜的合成方法,金刚石自支撑膜和金刚石膜的抛光方法

摘要

A flat free-standing diamond film is produced by growing alternately more than one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b) of a substrate temperature of 880 DEG C to 950 DEG C and a hydrocarbon ratio of 2.5 vol% to 3.5vol%. The potential-convex films are made by a CVD method under the condition (a) of a substrate temperature of 800 DEG C to 850 DEG C and a hydrocarbon ratio of 0.5 vol% to 1.5 vol%. The condition (a) can make a potential-convex film of a good crystal quality in spite of the slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis. A multilayered diamond film with an arbitrary curvature can be produced by selecting the production conditions (a) and (b), and the thicknesses of the potential-convex layers and the potential-concave layers. The diamond films still fixed on the substrate can be polished by an ordinary polishing apparatus, since the film is flat. A polished flat diamond film can be obtained by eliminating the substrate. IMAGE
机译:通过在非金刚石衬底上交替生长多对一对势凹型金刚石层和势凸型金刚石层,并去除该衬底,从而制得平坦的自支撑金刚石膜。势凹膜通过CVD方法在基板温度为880℃至950℃且烃比率为2.5vol%至3.5vol%的条件(b)下制成。通过CVD方法在基板温度为800℃至850℃且烃比例为0.5体积%至1.5体积%的条件(a)下制备电位凸膜。尽管沉积速度较慢,但​​条件(a)仍可制得具有良好晶体质量的电位凸膜。为了减少合成的总时间,优选采用较薄的电势凸膜和较厚的电势凹膜的组件。通过选择制造条件(a)和(b)以及电位凹凸层和电位凹凸层的厚度,可以制造具有任意曲率的多层金刚石膜。由于膜是平坦的,因此可以通过常规的抛光设备来抛光仍固定在基板上的金刚石膜。可以通过去除基材来获得抛光的金刚石平膜。 <图像>

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