首页>
外国专利>
Self-aligned double-gate MOSFET by selective lateral epitaxy
Self-aligned double-gate MOSFET by selective lateral epitaxy
展开▼
机译:通过选择性横向外延自对准双栅MOSFET
展开▼
页面导航
摘要
著录项
相似文献
摘要
A novel method of fabricating a double-gate MOSFET structure is disclosed. The method utilizes selective lateral epitaxial growth of silicon into a thin gap formed between two sacrificial dielectric films for accurate thickness control. The sacrificial films are then replaced by a gate material (e.g., polysilicon) such that top and bottom gates are self-aligned to each other and to the channel region. Also disclosed is a self-aligned double-gate MOSFET constructed in accordance with the foregoing method.
展开▼