HGCDTE S-I-S two color infrared detector

摘要

A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.