METHOD FOR PREPARING EXPOSURE MASK DATA FOR ELECTRON BEAM ALIGNER AND MASK FOR ELECTRON BEAM ALIGNER

摘要

PROBLEM TO BE SOLVED: To improve the dimensional accuracy of patterns by transferring mask patterns to a resist on a silicon wafer by using a mask for segments type full electron beam aligner with which no overlay error of patterns occurs on the border between unit irradiation areas. SOLUTION: An area, including repeating patterns included in design pattern data, is divided into two maximum irradiation areas 2 (S1). Basic patterns, included in the maximum irradiation areas 2, are drawn (S2). Mask data is prepared with the basic patterns extracted from the maximum irradiation areas 2, except for the basic patterns separated at the border of the areas 2 (S5). The excluded basic patterns are exposed to light by variable electron forming beam and the like.