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METHOD FOR DEVELOPING RESIST AND RINSING SOLUTION USED AFTER SAME

机译:以后使用的开发抗蚀剂和冲洗液的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for developing a resist by which the breaking of a pattern is suppressed and practical resolution is enhanced at the time of forming a pattern with a ZEP resist (R). ;SOLUTION: A ZEP resist (R) a nanocomposite resist to which Buck- minsterfullerence (R) has been added is applied on a substrate, baked and exposed with electron beams. The substrate is then immersed in a developing solvent to carry out development, the solvent is washed off by rinsing with a perfluorocarbon solvent such as perfluoropentane, perfluorohexane or perfluoroheptane and the substrate is dried.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种用于显影抗蚀剂的方法,通过该方法,在用ZEP抗蚀剂(R)形成图案时,可以抑制图案的破裂并提高实际分辨率。 ;解决方案:将ZEP抗蚀剂(R)和添加了Buckminsterfullerence(R)的纳米复合抗蚀剂涂覆在基板上,烘烤并用电子束曝光。然后将基材浸入显影溶剂中进行显影,通过用全氟化碳溶剂(如全氟戊烷,全氟己烷或全氟庚烷)冲洗将溶剂洗去,然后干燥基材。版权所有:(C)1998,JPO

著录项

  • 公开/公告号JPH10228117A

    专利类型

  • 公开/公告日1998-08-25

    原文格式PDF

  • 申请/专利权人 NIPPON TELEGR & TELEPH CORP NTT;

    申请/专利号JP19970030874

  • 发明设计人 TAMAMURA TOSHIAKI;ISHII TETSUYOSHI;

    申请日1997-02-14

  • 分类号G03F7/30;G03F7/027;G03F7/32;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 03:05:57

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