PROCESSING METHOD OF OXIDE, DEPOSITION METHOD OF AMORPHOUS OXIDE FILM AND AMORPHOUS TANTALUN OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To obtain a processing method of oxide suitable for high volume production in which insulation of an oxide can be enhanced greatly without causing surface roughening or compositional shift due to cross contamination or sputtering effect during processing by performing heat treatment at a specified temperature in an atmosphere containing ozone. ;SOLUTION: A nitride layer 12 is formed on the surface of a low resistance n⁺ type Si substrate 11 and Ta₂O₆ film 13 is deposited thereon. The n⁺ type Si substrate 11 deposited with Ta₂O₆ film 13 is then placed on a heater in an ozone annealing chamber and subjected to quick heat treatment at anneal temperature thus performing ozone annealing in an atmosphere containing ozone gas under the atmospheric pressure. In this regard, the ozone concentration of ozone anneal atmosphere is 5-20vol.% in O₃/O₂ ratio, the anneal temperature is 300-500°C and the anneal time is 5-60min. Thereafter, an Al electrode 14 is formed.;COPYRIGHT: (C)1998,JPO