COMPOSITION FOR FORMING POSITIVE METAL SULFIDE THIN FILM PATTERN AND METHOD FOR FORMING POSITIVE METAL SULFIDE THIN FILM PATTERN

摘要

PROBLEM TO BE SOLVED: To form a good positive metal sulfide thin film pattern by a sol-gel method by incorporating a metal alkoxide and a compd. generating an etching assistant by photoirradiation. ;SOLUTION: A metal alkoxide and a compd. forming an etching assistant are incorporated into a composiltion for forming a positive metal sulfide thin film pattern. Any compd. generating an etching assistant capable of reacting with a metal alkoxide by photoirradiation to form a solvent-soluble compd. is appropriately used. Consequently, a compd. generating an acid or alkali as an etching assistant is appropriately used without any special restriction. One or ≥2 kinds selected from a iodonium salt, a sulfonium salt, a halogen- contg. benzene derivative, etc., are as the compd. Consequently, only the light- irradiated part is dissolved off when the composition is developed with a solvent after photoirradiation.;COPYRIGHT: (C)1997,JPO