Semiconductor equipment, insulating gate die field-effect transistor and Schottky gate die field-effect transistor

摘要

PURPOSE:To control the occupation factor of carriers at an interface level by a method wherein a Dirac delta doped layer is formed on a compound semiconductor layer making its base reach the depth equal to a debye length or less from the surface of the semiconductor layer. CONSTITUTION:An n-type GaAs layer 12 is epitaxially grown on a semi- insulating GaAs substrate 11 through an MBE method so as to have a specified thickness, and then Si is epitaxially grown thereon in a single atomic layer to form a delta doped layer 13. Then, an n-type GaAs layer is epitaxially grown again on the delta doped layer 13 to make the n-type GaAs layer 12 as thick as specified. And, an AuGe/Ni film is formed on the whole face, which is patterned through etching and then subjected to a heat treatment to make the AuGe/Ni film and the n-type GaAs layer 12 alloyed for the formation of a source 16 and a drain 17. Then, an insulating film is formed on the whole face, which is patterned through etching to form a gate insulating film 14. Next, a metal film of Al or Au is formed on the whole face, which is patterned through etching for the formation of a gate electrode 15. By this set-up, the occupation factor of carriers at an interface level can be controlled.