首页> 外国专利> Dielectric porcelain constituent and multilayer alumina quality wiring substrate and package null for semiconductor device enclosing

Dielectric porcelain constituent and multilayer alumina quality wiring substrate and package null for semiconductor device enclosing

机译:用于半导体器件封装的介电陶瓷成分和多层氧化铝质量的布线基板和封装无效

摘要

PURPOSE:To greatly improve the dielectric constant of a dielectric ceramic composition and prevent the error operation of a semiconductor IC (integrated circuit) due to outside noise and unnecessary radiation by putting the highly dielectric layer of such composition in the inside. CONSTITUTION:A dielectric ceramic composition consists of 40-95wt.% of Al2O3 and 5-60wt.% of Re and a multilayer alumina-based circuit substrate and a package for storing semiconductor elements consist of highly dielectric layers 11, 27 on which a pair of electrode layers 15, 23, 25, 29 are formed wherein the electrode layers are formed between insulating layers 13 of mainly Al2O3. The highly dielectric layers 11, 27 of the multilayer circuit substrate and the package for storing semiconductor elements contain 40-95wt.% of Al2O3 and 5-60wt.% of Re.
机译:用途:通过在内部放置这种成分的高介电层,可以极大地提高介电陶瓷成分的介电常数并防止由于外界噪声和不必要的辐射而导致的半导体IC(集成电路)的误操作。组成:介电陶瓷组合物由40-95wt。%的Al2O3和5-60wt。%的Re和多层氧化铝基电路基板组成,用于存储半导体元件的封装由高介电层11、27组成,其上一对形成电极层15、23、25、29中的一个电极层,其中电极层形成在主要为Al 2 O 3的绝缘层13之间。多层电路基板的高介电层11、27和用于存储半导体元件的封装包含40-95重量%的Al 2 O 3和5-60重量%的Re。

著录项

  • 公开/公告号JP2735746B2

    专利类型

  • 公开/公告日1998-04-02

    原文格式PDF

  • 申请/专利权人 KYOSERA KK;

    申请/专利号JP19920230993

  • 申请日1992-08-31

  • 分类号H01B3/12;C04B35/111;H01L23/12;H01L23/14;H01L23/15;

  • 国家 JP

  • 入库时间 2022-08-22 02:59:30

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