GALLIUM OXIDE COATINGS FOR OPTOELECTRONIC DEVICES

摘要

An optoelectronic III-V or II-VI semiconductor device comprises a thinfilm coating with optical characteristics providing low midgap interface statedensity. A field effect device for inversion channel applications on III-Vsemiconductors also comprises a thin dielectric film providing required interfacecharacteristics. The thin film is also applicable to passivation of states on exposedsurfaces of electronic III-V devices. The thin film comprises a uniform,homogeneous, dense, stoichiometric gallium oxide (Ga2O3) dielectric thin film,fabricated by electron-beam evaporation of a single crystal, high purity Gd3 Ga5 O12complex compound on semiconductor substrates kept at temperatures ranging from40 to 370°C and at background pressures at or above 1x 10 - 10 Torr.