FABRICATING METHOD OF OPTOELECTRONIC DEVICES WITH GALLIUM OXIDE COATINGS

摘要

The optoelectronic III-V or II-VI semiconductor device includes a thin film having optical characteristics for realizing an interface level near the center of a low density forbidden band. The field effect device for the inversion channel on a III-V semiconductor also contains the dielectric thin film which implement | achieves a required interface characteristic. Thin films can also be applied to protect the state of the exposed surface of electronic III-V devices. The thin film is uniform and homogeneous, prepared by electron beam deposition of a single crystal high purity Gd ₃ Ga ₅ O ₁₂ composite compound on a substrate maintained in a temperature range of 40 to 370 ° C. and a background pressure of 1 × 10 ⁻¹⁰ Torr or more. It consists of a gallium oxide (Ga ₂ O ₃ ) dielectric thin film of high density and stoichiometric composition.