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Uniform ballast resistance for a thermally balanced radio frequency power transistor
Uniform ballast resistance for a thermally balanced radio frequency power transistor
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机译:热平衡射频功率晶体管的均匀镇流电阻
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摘要
An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the base electrode, and is electrically connected to the first emitter electrode. Ballast resistors are formed in a substantially evenly spaced manner on each side the silicon die, in series with at least some of the electrode fingers of the first emitter electrode and in series of at least some of the electrode fingers of the second emitter electrode.
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