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CMOS circuit for providing a bandgap reference voltage
CMOS circuit for providing a bandgap reference voltage
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机译:用于提供带隙基准电压的CMOS电路
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摘要
A low voltage submicron CMOS circuit (10) for providing an output bandgap voltage (VBG) that is substantially independent of temperature and power supply variations has been provided. The CMOS circuit utilizes parasitic transistors (28-30) to create a delta voltage that has positive temperature coefficient across a differential pair of NMOS transistors (14, 16). This delta voltage is then converted into differential currents which are amplified and mirrored and summed together to provide an output current (IO) that has a positive temperature coefficient. This output current is then passed through a series network including a resistor element (52) and a parasitic PNP junction transistor (31) to provide a bandgap voltage of 1.2 volts wherein the voltage across the resistor element has a positive temperature coefficient and the voltage across the parasitic PNP junction transistor has an inherent negative temperature coefficient.
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机译:已经提供了一种低压亚微米CMOS电路(10),用于提供基本上与温度和电源变化无关的输出带隙电压(V BG Sub>)。 CMOS电路利用寄生晶体管(28-30)产生在整个差分对NMOS晶体管(14、16)上具有正温度系数的增量电压。然后,将此增量电压转换为差分电流,将其放大,镜像并累加在一起,以提供具有正温度系数的输出电流(I O Sub>)。然后,该输出电流流经包括电阻器元件(52)和寄生PNP结晶体管(31)的串联网络,以提供1.2伏的带隙电压,其中电阻器元件两端的电压具有正温度系数,而两端的电压寄生PNP结晶体管具有固有的负温度系数。
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