Apparatus and method for chemical mechanical polishing end point detection for planarization of insulating film of semiconductor device

摘要

The present invention discloses a chemical mechanical polishing end point detection apparatus and method for planarizing an insulating film of a semiconductor device. The present invention as the disclosed end point detecting apparatus comprises a carrier shaft 1 in which a pressure vacuum line 11 for applying a backward compression or a vacuum to a back surface of a wafer is vertically passed through and is moved up and down; A holder 2 fixed to the lower surface of the carrier shaft 1 and formed with a wafer holder hole 21 connected to the pressure vacuum line 11 and having a wafer fixed to a lower surface thereof; A polishing pad 6 disposed on the lower surface of the holder 2 for frictionally removing the interlayer insulating film of the wafer; A contact ring 3 fixed to the surface of the polishing pad 6 and fitted to the outer periphery of the wafer holder 2 at regular intervals; A guide ring (4) provided on an upper surface of the contact ring (3) and movably supporting the carrier shaft (1); A position sensing photodetector 5 installed on the upper surface of the guide ring 4; A height adjusting screw (9) provided on the guide ring (4) for adjusting the height of the photodetector (5); And a laser diode (8) irradiating a laser to the photodetector (5) and being lowered together with a carrier shaft (1) provided on an upper surface of the carrier shaft (1) do.