Electrostatic Discharge Input Protection Using Floating Gate Neuron MOS Field Effect Transistor as Tunable Trigger Element

摘要

Discloses a float gate neuron MOS transistor that may be integrated into a device such as a low voltage silicon controlled rectifier to protect internal circuitry against electrostatic discharge. The transistor includes two or more input gates capacitively coupled to the floating gate. By controlling the coupling ratio of the input gate, it is possible to control the transistor drain turn-on voltage very precisely and turn on the rectifier irrespective of the avalanche breakdown of the transistor.