The present invention relates to novel photoresist materials that can be used in the deep ultraviolet range, such as vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyltetrahydropyranyl ether-vinyl acetate copolymer, vinyl 4-tetrahydropyran Vinyltetrahydropyranyl ether-vinyl acetate copolymer and a process for their preparation. The co-solvent of the present invention exhibits excellent transparency because of its extremely low absorbance in the far ultraviolet region, and has improved dry etching resistance due to the acetal structure of the main chain and the acetal structure of the substituent.
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